SI3475DV-T1-GE3
MOSFET P-CH 200V 0.95A 6-TSOPManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SI3475DV-T1-GE3 is a P-Channel Power MOSFET designed for high-voltage applications. This component features a drain-source breakdown voltage (Vds) of 200 V and a continuous drain current (Id) of 950mA at 25°C (Tc). The device exhibits a maximum on-resistance (Rds On) of 1.61 Ohms at 900mA and 10V. Key parameters include a gate charge (Qg) of 18 nC (max) at 10V and an input capacitance (Ciss) of 500 pF (max) at 50V. The threshold voltage (Vgs(th)) is a maximum of 4V at 250µA. This MOSFET is offered in a 6-TSOP surface mount package and is supplied in Cut Tape (CT). Its robust specifications make it suitable for use in power management, industrial, and automotive sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Cut Tape (CT)Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Mounting Type | Surface Mount |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 950mA (Tc) |
| Rds On (Max) @ Id, Vgs | 1.61Ohm @ 900mA, 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | 6-TSOP |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 18 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 500 pF @ 50 V |
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