SI3475DV-T1-E3
MOSFET P-CH 200V 950MA 6TSOPManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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The Vishay Siliconix SI3475DV-T1-E3 is a P-Channel TrenchFET® power MOSFET designed for efficient power switching applications. This component features a drain-source breakdown voltage (Vdss) of 200V and a continuous drain current (Id) of 950mA at 25°C (Tc). With a maximum on-resistance (Rds On) of 1.61 Ohms at 900mA and 10V Vgs, it offers low conduction losses. The device is housed in a compact 6-TSOP package, suitable for surface mounting. Key parameters include a gate charge (Qg) of 18 nC maximum at 10V Vgs and input capacitance (Ciss) up to 500 pF at 50V Vds. The maximum power dissipation is rated at 2W (Ta) and 3.2W (Tc). This MOSFET is typically employed in power management, industrial automation, and renewable energy systems. It operates within a temperature range of -55°C to 150°C (TJ).
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 950mA (Tc) |
| Rds On (Max) @ Id, Vgs | 1.61Ohm @ 900mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2W (Ta), 3.2W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | 6-TSOP |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 18 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 500 pF @ 50 V |
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