SI3474DV-T1-GE3
MOSFET N-CH 100V 3.8A 6TSOPManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix TrenchFET® N-Channel MOSFET SI3474DV-T1-GE3. This 100 V device features a continuous drain current of 3.8 A (Tc) and a maximum power dissipation of 3.6 W (Tc). The N-Channel MOSFET is designed for surface mount applications with a 6-TSOP package. Key parameters include a maximum Rds On of 126 mOhm at 2 A and 10 V, a gate charge of 10.4 nC at 10 V, and an input capacitance of 196 pF at 50 V. Drive voltages range from 4.5 V to 10 V, with a maximum gate-source voltage of ±20 V and a threshold voltage of 3 V at 250 µA. The operating temperature range is -55°C to 150°C (TJ). This component is utilized in power management and switching applications across various industries.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 34 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.8A (Tc) |
| Rds On (Max) @ Id, Vgs | 126mOhm @ 2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.6W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 6-TSOP |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 10.4 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 196 pF @ 50 V |
Request a Quote
Clients Also Buy
SI2365EDS-T1-GE3
MOSFET P-CH 20V 5.9A TO236
SI2302CDS-T1-E3
MOSFET N-CH 20V 2.6A SOT23-3
SIA449DJ-T1-GE3
MOSFET P-CH 30V 12A PPAK SC70-6
