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SI3473DV-T1-GE3

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SI3473DV-T1-GE3

MOSFET P-CH 12V 5.9A 6TSOP

Manufacturer: Vishay Siliconix

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The Vishay Siliconix SI3473DV-T1-GE3 is a P-Channel TrenchFET® power MOSFET designed for efficient switching applications. This component features a Drain-Source Voltage (Vdss) of 12V and a continuous Drain Current (Id) of 5.9A at 25°C (Ta). The device offers a low on-resistance (Rds On) of 23mOhm at 7.9A and 4.5V Vgs, contributing to reduced conduction losses. Its Gate Charge (Qg) is 33 nC at 4.5V Vgs, ensuring fast switching speeds. This MOSFET is housed in a compact 6-TSOP (SOT-23-6 Thin) package, suitable for surface mounting. The maximum power dissipation is rated at 1.1W (Ta). The operating temperature range is from -55°C to 150°C (TJ). Drive voltages for optimal Rds On performance are 1.8V and 4.5V, with a maximum Gate-Source Voltage (Vgs) of ±8V. The Vishay Siliconix SI3473DV-T1-GE3 is commonly utilized in power management, battery charging, and portable electronics.

Additional Information

Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseSOT-23-6 Thin, TSOT-23-6
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C5.9A (Ta)
Rds On (Max) @ Id, Vgs23mOhm @ 7.9A, 4.5V
FET Feature-
Power Dissipation (Max)1.1W (Ta)
Vgs(th) (Max) @ Id1V @ 250µA
Supplier Device Package6-TSOP
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Vgs (Max)±8V
Drain to Source Voltage (Vdss)12 V
Gate Charge (Qg) (Max) @ Vgs33 nC @ 4.5 V

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