SI3469DV-T1-E3
MOSFET P-CH 20V 5A 6TSOPManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SI3469DV-T1-E3 is a P-Channel TrenchFET® MOSFET designed for efficient power management applications. This device features a Drain-to-Source Voltage (Vdss) of 20V and a continuous drain current (Id) capability of 5A at 25°C. The Rds(On) is specified at a maximum of 30mOhm at 6.7A and 10V Vgs. The device operates with a gate-source voltage range of ±20V and a threshold voltage (Vgs(th)) of 3V at 250µA. With a gate charge (Qg) of 30 nC at 10V, it offers optimized switching performance. The SI3469DV-T1-E3 is housed in a 6-TSOP (SOT-23-6 Thin) package, suitable for surface mounting. Its maximum power dissipation is 1.14W (Ta). This component finds application in power switching, load switching, and battery management systems across various industries.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5A (Ta) |
| Rds On (Max) @ Id, Vgs | 30mOhm @ 6.7A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.14W (Ta) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 6-TSOP |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 30 nC @ 10 V |
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