SI3469DV-T1-BE3
P-CHANNEL 20-V (D-S) MOSFETManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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The Vishay Siliconix SI3469DV-T1-BE3 is a P-Channel MOSFET designed for efficient power switching applications. This device features a drain-source voltage (Vdss) of 20 V and a continuous drain current (Id) capability of 5 A at 25°C ambient temperature. With a maximum Rds(on) of 30 mOhm at 6.7 A and 10 V, it offers low conduction losses. The MOSFET is housed in a 6-TSOP surface mount package, facilitating compact board designs. Key performance parameters include a gate charge (Qg) of 30 nC at 10 V and a threshold voltage (Vgs(th)) of 3 V maximum at 250 µA. This component is suitable for use in various sectors including consumer electronics and industrial control systems. The operating temperature range is from -55°C to 150°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 11 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5A (Ta) |
| Rds On (Max) @ Id, Vgs | 30mOhm @ 6.7A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.14W (Ta) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 6-TSOP |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 30 nC @ 10 V |
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