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SI3460DV-T1-GE3

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SI3460DV-T1-GE3

MOSFET N-CH 20V 5.1A 6TSOP

Manufacturer: Vishay Siliconix

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Vishay Siliconix TrenchFET® SI3460DV-T1-GE3 is an N-Channel power MOSFET with a 20V drain-source breakdown voltage. It offers a continuous drain current of 5.1A at 25°C (Ta) and a maximum power dissipation of 1.1W (Ta). This device features a low Rds(on) of 27mOhm at 5.1A and 4.5V Vgs. The gate threshold voltage is specified as a minimum of 450mV at 1mA, with a maximum gate-source voltage rating of ±8V. Drive voltages for optimal Rds(on) are 1.8V and 4.5V. The MOSFET is housed in a 6-TSOP (SOT-23-6 Thin) package, suitable for surface mounting. Key parameters include a maximum gate charge of 20nC at 4.5V Vgs. The operating temperature range is -55°C to 150°C (TJ). This component is commonly utilized in power management applications across various industries. It is supplied in Tape & Reel (TR) packaging.

Additional Information

Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 15 week(s)Product Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseSOT-23-6 Thin, TSOT-23-6
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C5.1A (Ta)
Rds On (Max) @ Id, Vgs27mOhm @ 5.1A, 4.5V
FET Feature-
Power Dissipation (Max)1.1W (Ta)
Vgs(th) (Max) @ Id450mV @ 1mA (Min)
Supplier Device Package6-TSOP
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Vgs (Max)±8V
Drain to Source Voltage (Vdss)20 V
Gate Charge (Qg) (Max) @ Vgs20 nC @ 4.5 V

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