SI3460DV-T1-GE3
MOSFET N-CH 20V 5.1A 6TSOPManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix TrenchFET® SI3460DV-T1-GE3 is an N-Channel power MOSFET with a 20V drain-source breakdown voltage. It offers a continuous drain current of 5.1A at 25°C (Ta) and a maximum power dissipation of 1.1W (Ta). This device features a low Rds(on) of 27mOhm at 5.1A and 4.5V Vgs. The gate threshold voltage is specified as a minimum of 450mV at 1mA, with a maximum gate-source voltage rating of ±8V. Drive voltages for optimal Rds(on) are 1.8V and 4.5V. The MOSFET is housed in a 6-TSOP (SOT-23-6 Thin) package, suitable for surface mounting. Key parameters include a maximum gate charge of 20nC at 4.5V Vgs. The operating temperature range is -55°C to 150°C (TJ). This component is commonly utilized in power management applications across various industries. It is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5.1A (Ta) |
| Rds On (Max) @ Id, Vgs | 27mOhm @ 5.1A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 1.1W (Ta) |
| Vgs(th) (Max) @ Id | 450mV @ 1mA (Min) |
| Supplier Device Package | 6-TSOP |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 4.5 V |
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