SI3460DV-T1-E3
MOSFET N-CH 20V 5.1A 6TSOPManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix N-Channel MOSFET, SI3460DV-T1-E3, from the TrenchFET® series, offers a 20V Drain-Source voltage and 5.1A continuous drain current at 25°C. This SOT-23-6 Thin package component features a low on-resistance of 27mOhm at 5.1A and 4.5V Vgs. Gate charge is specified at a maximum of 20 nC @ 4.5V. With a maximum power dissipation of 1.1W and an operating temperature range of -55°C to 150°C, the SI3460DV-T1-E3 is suitable for applications in power management, consumer electronics, and industrial control systems. Drive voltages range from 1.8V to 4.5V.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5.1A (Ta) |
| Rds On (Max) @ Id, Vgs | 27mOhm @ 5.1A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 1.1W (Ta) |
| Vgs(th) (Max) @ Id | 450mV @ 1mA (Min) |
| Supplier Device Package | 6-TSOP |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 4.5 V |
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