SI3460BDV-T1-GE3
MOSFET N-CH 20V 8A 6TSOPManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SI3460BDV-T1-GE3 is an N-Channel TrenchFET® power MOSFET designed for demanding applications. This component offers a 20V Drain-Source voltage (Vdss) and supports a continuous drain current of 8A at 25°C (Tc). Key characteristics include a maximum Rds(on) of 27mOhm at 5.1A and 4.5V Vgs, with a gate charge (Qg) of 24nC at 8V. The device features a low input capacitance (Ciss) of 860pF at 10V. It is packaged in a compact 6-TSOP (SOT-23-6 Thin) and is supplied on tape and reel. The Vishay Siliconix SI3460BDV-T1-GE3 is suitable for power management, battery charging, and power conversion circuits across various industries including consumer electronics and industrial automation. It operates within a temperature range of -55°C to 150°C (TJ).
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 11 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8A (Tc) |
| Rds On (Max) @ Id, Vgs | 27mOhm @ 5.1A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 2W (Ta), 3.5W (Tc) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | 6-TSOP |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 24 nC @ 8 V |
| Input Capacitance (Ciss) (Max) @ Vds | 860 pF @ 10 V |
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