SI3460BDV-T1-BE3
N-CHANNEL 20-V (D-S) MOSFETManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix N-Channel 20V MOSFET, part number SI3460BDV-T1-BE3, is designed for efficient power switching applications. This device features a low Rds(on) of 27mOhm at 5.1A and 4.5V, enabling minimal conduction losses. With a continuous drain current capability of 6.7A (Ta) and 8A (Tc), and a maximum power dissipation of 2W (Ta) or 3.5W (Tc), it is suitable for power management in various electronic systems. The MOSFET operates with a gate-source voltage range of ±8V and offers a low gate charge of 24 nC, facilitating fast switching speeds. Its input capacitance (Ciss) is a maximum of 860 pF at 10V. The SI3460BDV-T1-BE3 is presented in a 6-TSOP surface mount package, ideal for compact designs. This component finds application in consumer electronics, industrial control, and communication infrastructure.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 11 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6.7A (Ta), 8A (Tc) |
| Rds On (Max) @ Id, Vgs | 27mOhm @ 5.1A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 2W (Ta), 3.5W (Tc) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | 6-TSOP |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 24 nC @ 8 V |
| Input Capacitance (Ciss) (Max) @ Vds | 860 pF @ 10 V |
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