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SI3460BDV-T1-BE3

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SI3460BDV-T1-BE3

N-CHANNEL 20-V (D-S) MOSFET

Manufacturer: Vishay Siliconix

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Vishay Siliconix N-Channel 20V MOSFET, part number SI3460BDV-T1-BE3, is designed for efficient power switching applications. This device features a low Rds(on) of 27mOhm at 5.1A and 4.5V, enabling minimal conduction losses. With a continuous drain current capability of 6.7A (Ta) and 8A (Tc), and a maximum power dissipation of 2W (Ta) or 3.5W (Tc), it is suitable for power management in various electronic systems. The MOSFET operates with a gate-source voltage range of ±8V and offers a low gate charge of 24 nC, facilitating fast switching speeds. Its input capacitance (Ciss) is a maximum of 860 pF at 10V. The SI3460BDV-T1-BE3 is presented in a 6-TSOP surface mount package, ideal for compact designs. This component finds application in consumer electronics, industrial control, and communication infrastructure.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 11 week(s)Product Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseSOT-23-6 Thin, TSOT-23-6
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C6.7A (Ta), 8A (Tc)
Rds On (Max) @ Id, Vgs27mOhm @ 5.1A, 4.5V
FET Feature-
Power Dissipation (Max)2W (Ta), 3.5W (Tc)
Vgs(th) (Max) @ Id1V @ 250µA
Supplier Device Package6-TSOP
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Vgs (Max)±8V
Drain to Source Voltage (Vdss)20 V
Gate Charge (Qg) (Max) @ Vgs24 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds860 pF @ 10 V

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