SI3459DV-T1-E3
MOSFET P-CH 60V 2.2A 6TSOPManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix SI3459DV-T1-E3 is a P-Channel TrenchFET® MOSFET in a 6-TSOP package. This device offers a Drain-to-Source Voltage (Vdss) of 60V and a continuous Drain Current (Id) of 2.2A at 25°C (Tc). Its low on-resistance is specified at a maximum of 220mOhm at 2.2A and 10V. The device features a gate charge of 14 nC at 10V and a threshold voltage (Vgs(th)) of 1V at 250µA. Operating temperature ranges from -55°C to 150°C. This component is suitable for applications in industrial and consumer electronics.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.2A (Tc) |
| Rds On (Max) @ Id, Vgs | 220mOhm @ 2.2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2W (Ta) |
| Vgs(th) (Max) @ Id | 1V @ 250µA (Min) |
| Supplier Device Package | 6-TSOP |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 14 nC @ 10 V |
Request a Quote
Clients Also Buy
SI2365EDS-T1-GE3
MOSFET P-CH 20V 5.9A TO236
SI2302CDS-T1-E3
MOSFET N-CH 20V 2.6A SOT23-3
SIA449DJ-T1-GE3
MOSFET P-CH 30V 12A PPAK SC70-6
