SI3459BDV-T1-BE3
P-CHANNEL 60-V (D-S) MOSFETManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix P-Channel MOSFET, SI3459BDV-T1-BE3, offers a 60V drain-to-source breakdown voltage. This surface mount device, packaged in a 6-TSOP, provides a continuous drain current of 2.2A at 25°C ambient and 2.9A at 25°C case temperature. The maximum power dissipation is 2W (ambient) or 3.3W (case). Key electrical parameters include a maximum on-resistance (Rds On) of 216mOhm at 2.2A and 10V gate-source voltage. Gate charge (Qg) is 12nC maximum at 10V, and input capacitance (Ciss) is 350pF maximum at 30V. The device operates over a temperature range of -55°C to 150°C and supports drive voltages from 4.5V to 10V. Commonly utilized in power management and switching applications across industrial and automotive sectors.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 11 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.2A (Ta), 2.9A (Tc) |
| Rds On (Max) @ Id, Vgs | 216mOhm @ 2.2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2W (Ta), 3.3W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 6-TSOP |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 12 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 350 pF @ 30 V |
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