SI3458DV-T1-E3
MOSFET N-CH 60V 3.2A 6TSOPManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SI3458DV-T1-E3 is an N-Channel TrenchFET® power MOSFET designed for efficient power management applications. This device features a Drain-to-Source Voltage (Vdss) of 60V and a continuous Drain Current (Id) of 3.2A at 25°C, with a maximum power dissipation of 2W. The Rds(On) is specified at 100mOhm at 3.2A and 10V Vgs. Designed for surface mounting, it is housed in a compact 6-TSOP package. Key parameters include a Gate Charge (Qg) of 16 nC at 10V, a Vgs(th) of 1V at 250µA, and a maximum Vgs rating of ±20V. The operating temperature range is -55°C to 150°C. This component is suitable for use in power supplies, battery management, and other demanding electronic systems.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.2A (Ta) |
| Rds On (Max) @ Id, Vgs | 100mOhm @ 3.2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2W (Ta) |
| Vgs(th) (Max) @ Id | 1V @ 250µA (Min) |
| Supplier Device Package | 6-TSOP |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 16 nC @ 10 V |
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