SI3458BDV-T1-GE3
MOSFET N-CH 60V 4.1A 6TSOPManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix TrenchFET® SI3458BDV-T1-GE3 is an N-channel power MOSFET designed for efficient power management applications. This component features a 60V drain-source voltage (Vdss) and a continuous drain current (Id) of 4.1A at 25°C case temperature. The Rds(on) is specified at a maximum of 100mOhm at 3.2A and 10V gate-source voltage. It offers a gate charge (Qg) of 11 nC maximum at 10V Vgs and an input capacitance (Ciss) of 350 pF maximum at 30V Vds. The device is housed in a 6-TSOP surface-mount package, with a maximum power dissipation of 2W (Ta) or 3.3W (Tc). Operating temperature range is from -55°C to 150°C. This MOSFET is commonly utilized in power supply switching, battery management, and load switching within the computing and industrial sectors.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 11 week(s)Product Status: Last Time BuyPackaging: Digi-Reel®Download Free CAD Model:
Technical Details:
| Packaging | Digi-Reel® |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.1A (Tc) |
| Rds On (Max) @ Id, Vgs | 100mOhm @ 3.2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2W (Ta), 3.3W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 6-TSOP |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 11 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 350 pF @ 30 V |
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