SI3458BDV-T1-E3
MOSFET N-CH 60V 4.1A 6TSOPManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SI3458BDV-T1-E3 is an N-Channel TrenchFET® MOSFET designed for efficient power switching applications. This device offers a 60V drain-source voltage rating and a continuous drain current capability of 4.1A at 25°C (Tc). With a maximum Rds(on) of 100mOhm at 3.2A and 10V Vgs, it provides low conduction losses. The MOSFET features a gate charge (Qg) of 11 nC maximum at 10V and an input capacitance (Ciss) of 350 pF maximum at 30V. It supports drive voltages from 4.5V to 10V and has a ±20V maximum gate-source voltage. The SI3458BDV-T1-E3 is packaged in a 6-TSOP (SOT-23-6 Thin) for surface mounting and is supplied on tape and reel. Power dissipation is rated at 2W (Ta) or 3.3W (Tc). This component is suitable for use in power management, automotive, and industrial equipment.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 11 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.1A (Tc) |
| Rds On (Max) @ Id, Vgs | 100mOhm @ 3.2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2W (Ta), 3.3W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 6-TSOP |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 11 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 350 pF @ 30 V |
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