SI3458BDV-T1-BE3
MOSFET N-CH 60V 3.2A/4.1A 6TSOPManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SI3458BDV-T1-BE3 is an N-Channel MOSFET from the TrenchFET® series, housed in a 6-TSOP package. This device offers a Drain-to-Source Voltage (Vdss) of 60V and a continuous drain current (Id) of 3.2A at 25°C ambient temperature, increasing to 4.1A under case temperature conditions. The maximum power dissipation is rated at 2W (ambient) and 3.3W (case). Key electrical parameters include a maximum Rds(on) of 100mOhm at 3.2A and 10V Vgs. Gate charge (Qg) is 11nC (max) at 10V Vgs, and input capacitance (Ciss) is 350pF (max) at 30V Vds. Drive voltage ranges from 4.5V to 10V. With an operating temperature range of -55°C to 150°C (TJ), this component is suitable for power management applications across various industries. The device is supplied in Tape & Reel packaging.
Additional Information
Series: TrenchFET®RoHS Status: unknownManufacturer Lead Time: 11 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.2A (Ta), 4.1A (Tc) |
| Rds On (Max) @ Id, Vgs | 100mOhm @ 3.2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2W (Ta), 3.3W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 6-TSOP |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 11 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 350 pF @ 30 V |
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