SI3457BDV-T1-GE3
MOSFET P-CH 30V 3.7A 6TSOPManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix SI3457BDV-T1-GE3 is a P-Channel TrenchFET® Power MOSFET designed for demanding applications. This device features a 30V drain-to-source breakdown voltage and a continuous drain current capability of 3.7A at 25°C (Ta). The low on-resistance of 54mOhm is specified at 5A, 10V. The device offers a gate charge of 19nC at 10V, enabling efficient switching. Operating over a wide temperature range of -55°C to 150°C (TJ), it is housed in a compact 6-TSOP (SOT-23-6 Thin) surface-mount package, supplied in tape and reel. The SI3457BDV-T1-GE3 is suitable for use in power management, automotive, and industrial systems.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.7A (Ta) |
| Rds On (Max) @ Id, Vgs | 54mOhm @ 5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.14W (Ta) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 6-TSOP |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 19 nC @ 10 V |
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