SI3457BDV-T1-E3
MOSFET P-CH 30V 3.7A 6TSOPManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix P-Channel TrenchFET® MOSFET, part number SI3457BDV-T1-E3, is a 30V device suitable for power management applications. This P-channel MOSFET features a continuous drain current of 3.7A (Ta) at 25°C and a maximum power dissipation of 1.14W (Ta). The on-resistance is rated at a maximum of 54mOhm at 5A and 10V. It operates with a gate-source voltage range of ±20V and has a threshold voltage of 3V at 250µA. The device utilizes MOSFET technology and is supplied in a 6-TSOP surface mount package, delivered on tape and reel. Key specifications include a gate charge of 19 nC @ 10V and an operating temperature range of -55°C to 150°C. This component is utilized in automotive and industrial sectors.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.7A (Ta) |
| Rds On (Max) @ Id, Vgs | 54mOhm @ 5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.14W (Ta) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 6-TSOP |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 19 nC @ 10 V |
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