SI3456CDV-T1-GE3
MOSFET N-CH 30V 7.7A 6TSOPManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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The Vishay Siliconix TrenchFET® SI3456CDV-T1-GE3 is an N-Channel MOSFET designed for efficient power switching. This component features a 30V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 7.7A at 25°C (Tc). With a maximum Rds(On) of 34mOhm at 6.1A and 10V Vgs, it offers low conduction losses. The device operates with drive voltages from 4.5V to 10V and has a gate charge (Qg) of 12 nC at 10V. Input capacitance (Ciss) is a maximum of 460 pF at 15V. The SI3456CDV-T1-GE3 is available in a 6-TSOP package for surface mounting and supports power dissipation of 2W (Ta) or 3.3W (Tc). Its operating temperature range is -55°C to 150°C (TJ). This MOSFET is commonly utilized in power management applications across automotive and industrial sectors.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7.7A (Tc) |
| Rds On (Max) @ Id, Vgs | 34mOhm @ 6.1A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2W (Ta), 3.3W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 6-TSOP |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 12 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 460 pF @ 15 V |
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