SI3456BDV-T1-GE3
MOSFET N-CH 30V 4.5A 6TSOPManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SI3456BDV-T1-GE3 is an N-Channel TrenchFET® Power MOSFET designed for efficient power switching applications. This device features a 30V drain-source voltage rating and a continuous drain current capability of 4.5A at 25°C ambient temperature, with a maximum power dissipation of 1.1W. Optimized for low on-resistance, it achieves a maximum Rds(on) of 35mOhm at 6A and 10V Vgs. The MOSFET is housed in a compact 6-TSOP (SOT-23-6 Thin) package, suitable for surface mounting. Key electrical parameters include a gate charge of 13nC at 10V Vgs and a gate threshold voltage of 3V at 250µA. The operating temperature range is -55°C to 150°C. This component is commonly utilized in automotive, industrial, and consumer electronics power management solutions.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.5A (Ta) |
| Rds On (Max) @ Id, Vgs | 35mOhm @ 6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.1W (Ta) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 6-TSOP |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 13 nC @ 10 V |
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