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SI3456BDV-T1-E3

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SI3456BDV-T1-E3

MOSFET N-CH 30V 4.5A 6TSOP

Manufacturer: Vishay Siliconix

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The Vishay Siliconix SI3456BDV-T1-E3 is an N-Channel TrenchFET® power MOSFET designed for efficient power switching applications. This component offers a 30V drain-to-source voltage (Vdss) and a continuous drain current (Id) capability of 4.5A at 25°C. Its low on-resistance is rated at a maximum of 35mOhm at 6A and 10V gate-source voltage. The device features a gate charge (Qg) of 13nC maximum at 10V, supporting fast switching speeds. Manufactured with Vishay's TrenchFET® technology, it achieves excellent power dissipation of 1.1W (Ta) and is housed in a compact 6-TSOP (SOT-23-6 Thin) surface-mount package, suitable for space-constrained designs. The operating temperature range is -55°C to 150°C (TJ). This MOSFET is commonly utilized in power management, battery charging, and consumer electronics. It is supplied in tape and reel packaging.

Additional Information

Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 13 week(s)Product Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseSOT-23-6 Thin, TSOT-23-6
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C4.5A (Ta)
Rds On (Max) @ Id, Vgs35mOhm @ 6A, 10V
FET Feature-
Power Dissipation (Max)1.1W (Ta)
Vgs(th) (Max) @ Id3V @ 250µA
Supplier Device Package6-TSOP
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs13 nC @ 10 V

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