SI3455ADV-T1-GE3
MOSFET P-CH 30V 2.7A 6TSOPManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix P-Channel TrenchFET® MOSFET, part number SI3455ADV-T1-GE3, features a 30V Drain-Source Voltage (Vdss) and a continuous drain current of 2.7A at 25°C. This surface mount device in a 6-TSOP package offers a low on-resistance of 100mOhm at 3.5A and 10V Vgs. The operating temperature range is -55°C to 150°C. Key specifications include a gate charge of 13 nC at 10V and a maximum power dissipation of 1.14W. This component is suitable for applications in power management, battery charging, and load switching within the consumer electronics and industrial automation sectors.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.7A (Ta) |
| Rds On (Max) @ Id, Vgs | 100mOhm @ 3.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.14W (Ta) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 6-TSOP |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 13 nC @ 10 V |
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