SI3454CDV-T1-GE3
MOSFET N-CH 30V 4.2A 6TSOPManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix TrenchFET® N-Channel MOSFET, part number SI3454CDV-T1-GE3. This device features a 30V drain-source breakdown voltage and a continuous drain current of 4.2A at 25°C (Tc). With a maximum Rds(on) of 50mOhm at 3.8A and 10V Vgs, it offers efficient power switching. The device operates with a gate drive voltage range of 4.5V to 10V and has a typical gate charge of 10.6 nC at 10V. Input capacitance (Ciss) is a maximum of 305 pF at 15V. This surface-mount component is housed in a 6-TSOP package and is supplied on tape and reel. It is suitable for applications requiring low on-resistance and efficient power management, including automotive and industrial power control systems. The operating temperature range is -55°C to 150°C.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.2A (Tc) |
| Rds On (Max) @ Id, Vgs | 50mOhm @ 3.8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.25W (Ta), 1.5W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 6-TSOP |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 10.6 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 305 pF @ 15 V |
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