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SI3454CDV-T1-E3

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SI3454CDV-T1-E3

MOSFET N-CH 30V 4.2A 6TSOP

Manufacturer: Vishay Siliconix

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Vishay Siliconix N-Channel Power MOSFET, part number SI3454CDV-T1-E3, is a TrenchFET® series device designed for efficient power switching applications. This 30V device features a continuous drain current capability of 4.2A (Tc) and a low on-resistance of 50mOhm maximum at 3.8A and 10V Vgs. It is housed in a compact 6-TSOP package, suitable for surface mounting. Key parameters include a gate charge (Qg) of 10.6 nC maximum at 10V Vgs and input capacitance (Ciss) of 305 pF maximum at 15V Vds. With a maximum operating temperature of 150°C, this component finds utility in various sectors including industrial automation, consumer electronics, and automotive systems, leveraging its robust thermal performance and low conduction losses.

Additional Information

Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseSOT-23-6 Thin, TSOT-23-6
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C4.2A (Tc)
Rds On (Max) @ Id, Vgs50mOhm @ 3.8A, 10V
FET Feature-
Power Dissipation (Max)1.25W (Ta), 1.5W (Tc)
Vgs(th) (Max) @ Id3V @ 250µA
Supplier Device Package6-TSOP
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs10.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds305 pF @ 15 V

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