SI3454ADV-T1-E3
MOSFET N-CH 30V 3.4A 6TSOPManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix SI3454ADV-T1-E3 is an N-Channel TrenchFET® power MOSFET designed for demanding applications. This device features a 30V Drain-Source Voltage (Vdss) and a continuous drain current (Id) of 3.4A at 25°C ambient. The Rds(On) is specified at a maximum of 60mOhm at 4.5A and 10V Vgs. With a gate charge (Qg) of 15 nC maximum at 10V Vgs, this MOSFET offers efficient switching characteristics. The component is packaged in a space-saving 6-TSOP (SOT-23-6 Thin) for surface mounting and supports a maximum power dissipation of 1.14W (Ta). It operates across a wide temperature range of -55°C to 150°C (TJ) and has a Vgs(th) of 3V at 250µA. Typical applications include power management, battery-powered devices, and consumer electronics.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.4A (Ta) |
| Rds On (Max) @ Id, Vgs | 60mOhm @ 4.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.14W (Ta) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 6-TSOP |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 10 V |
Request a Quote
Clients Also Buy
SI2365EDS-T1-GE3
MOSFET P-CH 20V 5.9A TO236
SI2302CDS-T1-E3
MOSFET N-CH 20V 2.6A SOT23-3
SIA449DJ-T1-GE3
MOSFET P-CH 30V 12A PPAK SC70-6
