SI3451DV-T1-GE3
MOSFET P-CH 20V 2.8A 6TSOPManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SI3451DV-T1-GE3 is a P-Channel TrenchFET® Power MOSFET designed for efficient power management. This device features a 20V drain-source breakdown voltage and a continuous drain current capability of 2.8A (Tc). With a low on-resistance of 115mOhm maximum at 4.5V Vgs and 2.6A Id, it minimizes conduction losses. The MOSFET offers a gate charge of 5.1 nC maximum at 5V Vgs and an input capacitance of 250 pF maximum at 10V Vds. It supports gate drive voltages from 2.5V to 4.5V for optimal performance. The SI3451DV-T1-GE3 is housed in a 6-TSOP package, suitable for surface mounting. Power dissipation is rated at 2.1W (Tc) and 1.25W (Ta). This component finds application in industries such as consumer electronics and industrial automation, where space-constrained power switching is critical. The operating temperature range is -55°C to 150°C.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.8A (Tc) |
| Rds On (Max) @ Id, Vgs | 115mOhm @ 2.6A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 1.25W (Ta), 2.1W (Tc) |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Supplier Device Package | 6-TSOP |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 5.1 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 250 pF @ 10 V |
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