SI3451DV-T1-E3
MOSFET P-CH 20V 2.8A 6TSOPManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SI3451DV-T1-E3 is a P-Channel TrenchFET® MOSFET designed for high-efficiency power switching applications. This component features a 20V drain-source breakdown voltage (Vdss) and a continuous drain current (Id) of 2.8A at 25°C (Tc). The device exhibits a maximum on-resistance (Rds On) of 115mOhm at 2.6A and 4.5V gate-source voltage (Vgs). It is packaged in a 6-TSOP (SOT-23-6 Thin) for surface mounting and supports drive voltages from 2.5V to 4.5V. Typical applications include power management, battery charging circuits, and DC-DC converters across various industrial sectors. The operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.8A (Tc) |
| Rds On (Max) @ Id, Vgs | 115mOhm @ 2.6A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 1.25W (Ta), 2.1W (Tc) |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Supplier Device Package | 6-TSOP |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 5.1 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 250 pF @ 10 V |
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