SI3447CDV-T1-GE3
MOSFET P-CH 12V 7.8A 6TSOPManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SI3447CDV-T1-GE3 is a P-Channel MOSFET designed for efficient power switching applications. This component features a 12V drain-source voltage (Vdss) and a continuous drain current (Id) capability of 7.8A at 25°C (Tc). The TrenchFET® series technology ensures low on-resistance, specified at a maximum of 36mOhm at 6.3A and 4.5V Vgs. With a gate threshold voltage (Vgs(th)) of 1V at 250µA and a maximum gate-source voltage (Vgs) of ±8V, it offers flexible drive voltage options. The device supports drive voltages from 1.8V to 4.5V for optimal Rds(on) performance. Input capacitance (Ciss) is 910pF max at 6V Vds, and gate charge (Qg) is 30nC max at 8V Vgs. Packaged in a 6-TSOP (SOT-23-6 Thin) and supplied on tape and reel, the SI3447CDV-T1-GE3 has a maximum power dissipation of 2W (Ta) or 3W (Tc) and operates across a temperature range of -55°C to 150°C. This MOSFET is commonly utilized in power management solutions within consumer electronics and industrial automation.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7.8A (Tc) |
| Rds On (Max) @ Id, Vgs | 36mOhm @ 6.3A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 2W (Ta), 3W (Tc) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | 6-TSOP |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 12 V |
| Gate Charge (Qg) (Max) @ Vgs | 30 nC @ 8 V |
| Input Capacitance (Ciss) (Max) @ Vds | 910 pF @ 6 V |
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