SI3447BDV-T1-E3
MOSFET P-CH 12V 4.5A 6TSOPManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SI3447BDV-T1-E3 is a P-Channel TrenchFET® MOSFET designed for power management applications. This component features a drain-source voltage (Vdss) of 12V and a continuous drain current (Id) of 4.5A at 25°C (Ta). With a maximum power dissipation of 1.1W (Ta) and a low on-resistance (Rds On) of 40mOhm at 6A and 4.5V Vgs, it offers efficient switching. The device operates with gate-source voltages (Vgs) ranging from 1.8V to 4.5V for optimal Rds On performance and has a maximum Vgs tolerance of ±8V. Key specifications include a gate charge (Qg) of 14 nC at 4.5V Vgs. The SI3447BDV-T1-E3 is housed in a 6-TSOP surface mount package and is supplied on tape and reel. Its operating temperature range is -55°C to 150°C (TJ). This component is utilized in various industries including consumer electronics and industrial automation.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.5A (Ta) |
| Rds On (Max) @ Id, Vgs | 40mOhm @ 6A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 1.1W (Ta) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | 6-TSOP |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 12 V |
| Gate Charge (Qg) (Max) @ Vgs | 14 nC @ 4.5 V |
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