SI3446ADV-T1-GE3
MOSFET N-CH 20V 6A 6TSOPManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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The Vishay Siliconix SI3446ADV-T1-GE3 is an N-Channel TrenchFET® power MOSFET. This component features a 20V drain-source voltage (Vds) rating and a continuous drain current (Id) of 6A at 25°C (Tc). Its low on-resistance (Rds On) is specified at a maximum of 37mOhm at 5.8A and 4.5V Vgs. The device is housed in a 6-TSOP package for surface mounting and supports gate drive voltages from 2.5V to 4.5V. Key electrical characteristics include a maximum gate charge (Qg) of 20 nC at 10V and an input capacitance (Ciss) of 640 pF at 10V Vds. Power dissipation is rated at 2W (Ta) and 3.2W (Tc). This Vishay Siliconix MOSFET is suitable for applications in consumer electronics and industrial power management.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6A (Tc) |
| Rds On (Max) @ Id, Vgs | 37mOhm @ 5.8A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 2W (Ta), 3.2W (Tc) |
| Vgs(th) (Max) @ Id | 1.8V @ 250µA |
| Supplier Device Package | 6-TSOP |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 640 pF @ 10 V |
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