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SI3446ADV-T1-E3

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SI3446ADV-T1-E3

MOSFET N-CH 20V 6A 6TSOP

Manufacturer: Vishay Siliconix

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The Vishay Siliconix SI3446ADV-T1-E3 is an N-Channel TrenchFET® power MOSFET designed for demanding applications. This component features a 20V drain-to-source voltage (Vdss) and a continuous drain current (Id) capability of 6A at 25°C (Tc). With a maximum on-resistance (Rds On) of 37mOhm at 5.8A and 4.5V Vgs, it offers low conduction losses. The gate charge (Qg) is 20 nC maximum at 10V Vgs, and input capacitance (Ciss) is 640 pF maximum at 10V Vds. This device supports drive voltages from 2.5V to 4.5V. The SI3446ADV-T1-E3 has a power dissipation of 2W (Ta) and 3.2W (Tc), and operates across an extended temperature range of -55°C to 150°C (TJ). It is housed in a compact 6-TSOP (SOT-23-6 Thin) package and is supplied on tape and reel. This MOSFET is suitable for power management solutions in automotive, industrial, and consumer electronics markets.

Additional Information

Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseSOT-23-6 Thin, TSOT-23-6
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C6A (Tc)
Rds On (Max) @ Id, Vgs37mOhm @ 5.8A, 4.5V
FET Feature-
Power Dissipation (Max)2W (Ta), 3.2W (Tc)
Vgs(th) (Max) @ Id1.8V @ 250µA
Supplier Device Package6-TSOP
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Vgs (Max)±12V
Drain to Source Voltage (Vdss)20 V
Gate Charge (Qg) (Max) @ Vgs20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds640 pF @ 10 V

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