SI3445DV-T1-GE3
MOSFET P-CH 8V 6TSOPManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix TrenchFET® P-Channel MOSFET, part number SI3445DV-T1-GE3. This device features a drain-to-source voltage (Vdss) of 8 V and a continuous drain current (Id) of 5.6 A at 25°C (Ta). With a maximum power dissipation of 2 W (Ta) and a low on-resistance (Rds On) of 42 mOhm at 5.6 A and 4.5 V, it is suitable for power management applications. The SI3445DV-T1-GE3 utilizes advanced TrenchFET technology for enhanced performance. It is available in a 6-TSOP surface mount package and operates across a temperature range of -55°C to 150°C (TJ). Gate drive voltages range from 1.8 V to 4.5 V, with a maximum gate-source voltage (Vgs) of ±8 V. This component finds application in battery management, power supplies, and consumer electronics.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5.6A (Ta) |
| Rds On (Max) @ Id, Vgs | 42mOhm @ 5.6A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 2W (Ta) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | 6-TSOP |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 8 V |
| Gate Charge (Qg) (Max) @ Vgs | 25 nC @ 4.5 V |
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