SI3445DV-T1-E3
MOSFET P-CH 8V 6TSOPManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix P-Channel TrenchFET® MOSFET, part number SI3445DV-T1-E3. This device features a Drain-to-Source Voltage (Vdss) of 8V and a continuous Drain Current (Id) of 5.6A at 25°C, with a maximum power dissipation of 2W. The P-Channel MOSFET exhibits a low on-resistance of 42mOhm at 5.6A and 4.5V, with a gate-source threshold voltage (Vgs(th)) of 1V at 250µA. Drive voltages range from 1.8V to 4.5V, and the maximum gate-source voltage (Vgs) is ±8V. The SI3445DV-T1-E3 is packaged in a 6-TSOP (SOT-23-6 Thin) for surface mounting and operates across a temperature range of -55°C to 150°C. This component is suitable for applications in consumer electronics and industrial power management.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5.6A (Ta) |
| Rds On (Max) @ Id, Vgs | 42mOhm @ 5.6A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 2W (Ta) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | 6-TSOP |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 8 V |
| Gate Charge (Qg) (Max) @ Vgs | 25 nC @ 4.5 V |
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