SI3445ADV-T1-GE3
MOSFET P-CH 8V 4.4A 6TSOPManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix P-Channel MOSFET, part number SI3445ADV-T1-GE3, offers an 8V drain-source breakdown voltage and a continuous drain current capability of 4.4A at 25°C. This device features a low on-resistance of 42mOhm maximum at 5.8A and 4.5V Vgs. Designed for surface mounting, it is supplied in a 6-TSOP package. The gate charge is specified at 19nC maximum at 4.5V Vgs. Operating across a temperature range of -55°C to 150°C, this MOSFET is suitable for applications including power management and battery-powered devices.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.4A (Ta) |
| Rds On (Max) @ Id, Vgs | 42mOhm @ 5.8A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 1.1W (Ta) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | 6-TSOP |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 8 V |
| Gate Charge (Qg) (Max) @ Vgs | 19 nC @ 4.5 V |
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