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SI3445ADV-T1-E3

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SI3445ADV-T1-E3

MOSFET P-CH 8V 4.4A 6TSOP

Manufacturer: Vishay Siliconix

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The Vishay Siliconix SI3445ADV-T1-E3 is a P-Channel Power MOSFET designed for high-efficiency switching applications. This component features a Drain-to-Source Voltage (Vdss) of 8V and a continuous Drain Current (Id) of 4.4A at 25°C, with a maximum power dissipation of 1.1W (Ta). The device exhibits a low on-resistance (Rds On) of 42mOhm at 5.8A and 4.5V Vgs. It supports a wide gate drive voltage range from 1.8V to 4.5V, with a maximum Vgs of ±8V. The typical gate charge (Qg) is 19 nC at 4.5V. This surface mount device is housed in a compact 6-TSOP (SOT-23-6 Thin) package, suitable for space-constrained designs. It operates across a wide temperature range of -55°C to 150°C (TJ). This MOSFET is commonly utilized in portable electronics, battery management systems, and consumer devices.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseSOT-23-6 Thin, TSOT-23-6
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C4.4A (Ta)
Rds On (Max) @ Id, Vgs42mOhm @ 5.8A, 4.5V
FET Feature-
Power Dissipation (Max)1.1W (Ta)
Vgs(th) (Max) @ Id1V @ 250µA
Supplier Device Package6-TSOP
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Vgs (Max)±8V
Drain to Source Voltage (Vdss)8 V
Gate Charge (Qg) (Max) @ Vgs19 nC @ 4.5 V

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