SI3445ADV-T1-E3
MOSFET P-CH 8V 4.4A 6TSOPManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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The Vishay Siliconix SI3445ADV-T1-E3 is a P-Channel Power MOSFET designed for high-efficiency switching applications. This component features a Drain-to-Source Voltage (Vdss) of 8V and a continuous Drain Current (Id) of 4.4A at 25°C, with a maximum power dissipation of 1.1W (Ta). The device exhibits a low on-resistance (Rds On) of 42mOhm at 5.8A and 4.5V Vgs. It supports a wide gate drive voltage range from 1.8V to 4.5V, with a maximum Vgs of ±8V. The typical gate charge (Qg) is 19 nC at 4.5V. This surface mount device is housed in a compact 6-TSOP (SOT-23-6 Thin) package, suitable for space-constrained designs. It operates across a wide temperature range of -55°C to 150°C (TJ). This MOSFET is commonly utilized in portable electronics, battery management systems, and consumer devices.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.4A (Ta) |
| Rds On (Max) @ Id, Vgs | 42mOhm @ 5.8A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 1.1W (Ta) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | 6-TSOP |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 8 V |
| Gate Charge (Qg) (Max) @ Vgs | 19 nC @ 4.5 V |
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