SI3443BDV-T1-GE3
MOSFET P-CH 20V 3.6A 6TSOPManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix P-Channel TrenchFET® MOSFET, part number SI3443BDV-T1-GE3, offers a 20V drain-source breakdown voltage. This device features a continuous drain current capability of 3.6A (Ta) and a maximum power dissipation of 1.1W (Ta). The low on-resistance is specified as 60mOhm maximum at 4.7A and 4.5V gate-source voltage, with drive voltages available at 2.5V and 4.5V. The device is housed in a 6-TSOP (SOT-23-6 Thin) surface mount package and operates within a temperature range of -55°C to 150°C. Gate charge is rated at 9 nC maximum at 4.5V. This component is utilized in power management and battery charging applications across various industrial sectors.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 11 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.6A (Ta) |
| Rds On (Max) @ Id, Vgs | 60mOhm @ 4.7A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 1.1W (Ta) |
| Vgs(th) (Max) @ Id | 1.4V @ 250µA |
| Supplier Device Package | 6-TSOP |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 9 nC @ 4.5 V |
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