SI3443BDV-T1-E3
MOSFET P-CH 20V 3.6A 6TSOPManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SI3443BDV-T1-E3 is a P-channel TrenchFET® MOSFET designed for efficient power switching applications. This device features a 20V Drain-Source Voltage (Vdss) and a continuous Drain Current (Id) of 3.6A at 25°C, with a maximum power dissipation of 1.1W. The on-resistance (Rds On) is specified at a maximum of 60mOhm at 4.7A and 4.5V gate-source voltage. It offers a gate drive range from 2.5V to 4.5V, with a maximum gate charge (Qg) of 9 nC at 4.5V. The device operates within a temperature range of -55°C to 150°C and is housed in a 6-TSOP (SOT-23-6 Thin) package, supplied on tape and reel. This component is suitable for use in consumer electronics and industrial automation.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 8 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.6A (Ta) |
| Rds On (Max) @ Id, Vgs | 60mOhm @ 4.7A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 1.1W (Ta) |
| Vgs(th) (Max) @ Id | 1.4V @ 250µA |
| Supplier Device Package | 6-TSOP |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 9 nC @ 4.5 V |
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