SI3443BDV-T1-BE3
MOSFET P-CH 20V 3.6A 6TSOPManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SI3443BDV-T1-BE3 is a P-Channel TrenchFET® power MOSFET designed for efficient power management. This device features a Drain-to-Source Voltage (Vdss) of 20V and a continuous Drain Current (Id) of 3.6A at 25°C (Ta), with a maximum power dissipation of 1.1W (Ta). Optimized for low on-resistance, it achieves a maximum Rds(On) of 60mOhm at 4.7A and 4.5V Vgs. The gate drive voltage requirement is specified between 2.5V and 4.5V. With a typical Gate Charge (Qg) of 9nC at 4.5V Vgs and a maximum Vgs of ±12V, it offers fast switching characteristics. The threshold voltage (Vgs(th)) is a maximum of 1.4V at 250µA. Encased in a 6-TSOP package, this surface-mount component operates across a wide temperature range of -55°C to 150°C (TJ). It is commonly utilized in applications such as battery management, power supplies, and consumer electronics.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 11 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.6A (Ta) |
| Rds On (Max) @ Id, Vgs | 60mOhm @ 4.7A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 1.1W (Ta) |
| Vgs(th) (Max) @ Id | 1.4V @ 250µA |
| Supplier Device Package | 6-TSOP |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 9 nC @ 4.5 V |
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