SI3442CDV-T1-GE3
MOSFET N-CH 20V 8A 6TSOPManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SI3442CDV-T1-GE3 is an N-Channel TrenchFET® power MOSFET designed for efficient power switching applications. This component features a drain-source voltage (Vdss) of 20V and a continuous drain current (Id) of 8A at 25°C (Tc). The device exhibits a maximum on-resistance (Rds On) of 27mOhm at 6.5A and 10V gate-source voltage. With a gate charge (Qg) of 14nC at 10V and input capacitance (Ciss) of 335pF at 10V, it is optimized for high-frequency operation. The SI3442CDV-T1-GE3 is packaged in a 6-TSOP surface-mount configuration, facilitating automated assembly. Power dissipation is rated at 1.7W (Ta) and 2.7W (Tc). This MOSFET is suitable for use in power management, automotive, and industrial control systems.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8A (Tc) |
| Rds On (Max) @ Id, Vgs | 27mOhm @ 6.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.7W (Ta), 2.7W (Tc) |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Supplier Device Package | 6-TSOP |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 10V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 14 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 335 pF @ 10 V |
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