SI3442BDV-T1-E3
MOSFET N-CH 20V 3A 6TSOPManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SI3442BDV-T1-E3 is an N-Channel Power MOSFET from the TrenchFET® series. This device features a Drain-Source Voltage (Vdss) of 20V and a continuous Drain current (Id) of 3A (Ta) at 25°C, with a maximum power dissipation of 860mW (Ta). The Rds(on) is specified at a maximum of 57mOhm at 4A, 4.5V, and it offers low on-resistance drive capabilities with gate drive voltages of 2.5V and 4.5V. Key parameters include a maximum Gate Charge (Qg) of 5nC at 4.5V and an input capacitance (Ciss) of 295pF at 10V. The Vishay Siliconix SI3442BDV-T1-E3 is supplied in a 6-TSOP (SOT-23-6 Thin) package for surface mounting and operates across a temperature range of -55°C to 150°C (TJ). This component is utilized in applications such as power management, battery charging, and general-purpose switching in consumer electronics and industrial equipment.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 11 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3A (Ta) |
| Rds On (Max) @ Id, Vgs | 57mOhm @ 4A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 860mW (Ta) |
| Vgs(th) (Max) @ Id | 1.8V @ 250µA |
| Supplier Device Package | 6-TSOP |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 5 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 295 pF @ 10 V |
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