SI3442BDV-T1-BE3
N-CHANNEL 2.5-V (G-S) MOSFETManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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The Vishay Siliconix SI3442BDV-T1-BE3 is an N-Channel Power MOSFET designed for efficient power management applications. This surface mount device features a drain-source breakdown voltage (Vdss) of 20V and a continuous drain current (Id) of 3A at 25°C ambient temperature. With a maximum on-resistance (Rds On) of 57mOhm at 4A and 4.5V Vgs, it offers low conduction losses. The device supports a gate-source drive voltage range from 2.5V to 4.5V, with a maximum gate charge (Qg) of 5 nC at 4.5V. Its input capacitance (Ciss) is rated at a maximum of 295 pF at 10V. The SI3442BDV-T1-BE3 is packaged in a 6-TSOP (SOT-23-6 Thin) and operates across an industrial temperature range of -55°C to 150°C. The maximum power dissipation is 860mW at 25°C ambient. This component is suitable for use in consumer electronics, industrial control, and automotive systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 11 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3A (Ta) |
| Rds On (Max) @ Id, Vgs | 57mOhm @ 4A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 860mW (Ta) |
| Vgs(th) (Max) @ Id | 1.8V @ 250µA |
| Supplier Device Package | 6-TSOP |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 5 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 295 pF @ 10 V |
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