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SI3441BDV-T1-GE3

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SI3441BDV-T1-GE3

MOSFET P-CH 20V 2.45A 6TSOP

Manufacturer: Vishay Siliconix

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Vishay Siliconix P-Channel TrenchFET® MOSFET, part number SI3441BDV-T1-GE3, is designed for power management applications. This device features a Drain to Source Voltage (Vdss) of 20V and a continuous Drain current (Id) of 2.45A at 25°C. The Rds(On) is specified at a maximum of 90mOhm at 3.3A and 4.5V Vgs. With a gate charge (Qg) of 8 nC at 4.5V, it offers efficient switching characteristics. The power dissipation (Pd) is 860mW at 25°C. Mounted in a 6-TSOP package, this MOSFET is suitable for demanding applications in industries such as consumer electronics and industrial automation. It operates within a temperature range of -55°C to 150°C.

Additional Information

Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseSOT-23-6 Thin, TSOT-23-6
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C2.45A (Ta)
Rds On (Max) @ Id, Vgs90mOhm @ 3.3A, 4.5V
FET Feature-
Power Dissipation (Max)860mW (Ta)
Vgs(th) (Max) @ Id850mV @ 250µA
Supplier Device Package6-TSOP
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Vgs (Max)±8V
Drain to Source Voltage (Vdss)20 V
Gate Charge (Qg) (Max) @ Vgs8 nC @ 4.5 V

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