SI3441BDV-T1-GE3
MOSFET P-CH 20V 2.45A 6TSOPManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix P-Channel TrenchFET® MOSFET, part number SI3441BDV-T1-GE3, is designed for power management applications. This device features a Drain to Source Voltage (Vdss) of 20V and a continuous Drain current (Id) of 2.45A at 25°C. The Rds(On) is specified at a maximum of 90mOhm at 3.3A and 4.5V Vgs. With a gate charge (Qg) of 8 nC at 4.5V, it offers efficient switching characteristics. The power dissipation (Pd) is 860mW at 25°C. Mounted in a 6-TSOP package, this MOSFET is suitable for demanding applications in industries such as consumer electronics and industrial automation. It operates within a temperature range of -55°C to 150°C.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.45A (Ta) |
| Rds On (Max) @ Id, Vgs | 90mOhm @ 3.3A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 860mW (Ta) |
| Vgs(th) (Max) @ Id | 850mV @ 250µA |
| Supplier Device Package | 6-TSOP |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 8 nC @ 4.5 V |
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