SI3440DV-T1-GE3
MOSFET N-CH 150V 1.2A 6TSOPManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SI3440DV-T1-GE3 is an N-Channel TrenchFET® power MOSFET designed for demanding applications. This component features a drain-to-source breakdown voltage of 150V and a continuous drain current capability of 1.2A at 25°C, with a maximum power dissipation of 1.14W under the same conditions. The low on-resistance (Rds On) of 375mOhm is achievable at 1.5A and 10V Vgs. It operates with a gate-source voltage range of ±20V and a threshold voltage of 4V at 250µA. The device is housed in a compact 6-TSOP package, suitable for surface mounting. Its robust thermal performance and efficient switching characteristics make it ideal for use in power management, consumer electronics, and industrial control systems.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 11 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1.2A (Ta) |
| Rds On (Max) @ Id, Vgs | 375mOhm @ 1.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.14W (Ta) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | 6-TSOP |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 150 V |
| Gate Charge (Qg) (Max) @ Vgs | 8 nC @ 10 V |
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