SI3440DV-T1-E3
MOSFET N-CH 150V 1.2A 6TSOPManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix TrenchFET® series N-channel power MOSFET SI3440DV-T1-E3. This device features a 150V drain-to-source breakdown voltage and a continuous drain current of 1.2A at 25°C ambient temperature, with a maximum power dissipation of 1.14W. The Rds(On) is specified at a maximum of 375mOhm when Id is 1.5A and Vgs is 10V. It utilizes a 6-TSOP surface mount package. Key electrical parameters include a gate charge of 8 nC at 10V Vgs and a threshold voltage (Vgs(th)) of 4V at 250µA. Operating temperature range is -55°C to 150°C. This component is suitable for applications in power management and switching circuits across various industrial sectors.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 11 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1.2A (Ta) |
| Rds On (Max) @ Id, Vgs | 375mOhm @ 1.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.14W (Ta) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | 6-TSOP |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 150 V |
| Gate Charge (Qg) (Max) @ Vgs | 8 nC @ 10 V |
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