SI3440ADV-T1-GE3
MOSFET N-CH 150V 2.2A 6TSOPManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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The Vishay Siliconix SI3440ADV-T1-GE3 is an N-Channel TrenchFET® power MOSFET designed for demanding applications. This component offers a 150V drain-source voltage rating and a continuous drain current capability of 2.2A at 25°C (Tc). With a maximum Rds(on) of 380mOhm at 1.5A and 10V Vgs, it ensures efficient power transfer. The device features a low input capacitance of 80pF (Ciss) at 75V and a gate charge of 4nC at 10V, contributing to high switching speeds. Rated for 3.6W power dissipation (Tc), it is housed in a compact 6-TSOP (SOT-23-6 Thin) surface mount package, suitable for space-constrained designs. This MOSFET is utilized in industries such as industrial power supplies and automotive electronics. It operates across a wide temperature range of -55°C to 150°C.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 34 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.2A (Tc) |
| Rds On (Max) @ Id, Vgs | 380mOhm @ 1.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.6W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | 6-TSOP |
| Drive Voltage (Max Rds On, Min Rds On) | 7.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 150 V |
| Gate Charge (Qg) (Max) @ Vgs | 4 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 80 pF @ 75 V |