SI3437DV-T1-BE3
P-CHANNEL 150-V (D-S) MOSFETManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SI3437DV-T1-BE3 is a P-channel MOSFET designed for demanding power management applications. This device features a Drain-Source Voltage (Vdss) of 150 V and a continuous drain current (Id) of 1.1A at an ambient temperature of 25°C, or 1.4A at the case temperature. With a maximum power dissipation of 2W (Ta) and 3.2W (Tc), it offers robust thermal performance. The Rds(On) is specified at a maximum of 750mOhm at 1.4A and 10V gate drive. Key parameters include a Gate Charge (Qg) of 19 nC (max) at 10V and an input capacitance (Ciss) of 510 pF (max) at 50V. The SI3437DV-T1-BE3 is housed in a 6-TSOP surface mount package, suitable for high-density designs. Its operating temperature range is -55°C to 150°C. This component finds application in various industries including industrial automation, consumer electronics, and automotive systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 11 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1.1A (Ta), 1.4A (Tc) |
| Rds On (Max) @ Id, Vgs | 750mOhm @ 1.4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2W (Ta), 3.2W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | 6-TSOP |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 150 V |
| Gate Charge (Qg) (Max) @ Vgs | 19 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 510 pF @ 50 V |
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