SI3434DV-T1-E3
MOSFET N-CH 30V 4.6A 6TSOPManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SI3434DV-T1-E3 is an N-Channel TrenchFET® power MOSFET designed for efficient power switching applications. This component features a 30 V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 4.6 A at 25°C, with a maximum power dissipation of 1.14 W (Ta). The device exhibits a low on-resistance (Rds On) of 34 mOhm at 6.1 A and 4.5 V gate-source voltage. With a gate charge (Qg) of 12 nC at 4.5 V, it is optimized for fast switching performance. The SI3434DV-T1-E3 is provided in a 6-TSOP surface mount package, suitable for high-density board layouts. Its operating temperature range is -55°C to 150°C (TJ). This MOSFET is commonly employed in various industrial and consumer electronics, including power management and battery-powered devices.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.6A (Ta) |
| Rds On (Max) @ Id, Vgs | 34mOhm @ 6.1A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 1.14W (Ta) |
| Vgs(th) (Max) @ Id | 600mV @ 1mA (Min) |
| Supplier Device Package | 6-TSOP |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 12 nC @ 4.5 V |
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