SI3433BDV-T1-E3
MOSFET P-CH 20V 4.3A 6TSOPManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SI3433BDV-T1-E3 is a P-Channel TrenchFET® power MOSFET designed for efficient power switching applications. This component features a Drain-to-Source Voltage (Vdss) of 20V and a continuous Drain Current (Id) of 4.3A (Ta). With a maximum On-Resistance (Rds On) of 42mOhm at 5.6A and 4.5V Vgs, it offers low conduction losses. The device supports gate drive voltages from 1.8V to 4.5V, with a maximum Gate Charge (Qg) of 18 nC at 4.5V. Operating within a temperature range of -55°C to 150°C (TJ), this MOSFET is supplied in a 6-TSOP package, suitable for surface mounting. Its low Rds(on) and efficient switching characteristics make it applicable in power management, battery charging, and portable electronics. The maximum power dissipation is rated at 1.1W (Ta).
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.3A (Ta) |
| Rds On (Max) @ Id, Vgs | 42mOhm @ 5.6A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 1.1W (Ta) |
| Vgs(th) (Max) @ Id | 850mV @ 250µA |
| Supplier Device Package | 6-TSOP |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 18 nC @ 4.5 V |
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