SI3430DV-T1-BE3
MOSFET N-CH 100V 1.8A 6TSOPManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix MOSFET N-Channel, part number SI3430DV-T1-BE3. This SOT-23-6 Thin (TSOT-23-6) package device features a 100V drain-to-source voltage (Vdss) and 1.8A continuous drain current at 25°C (Id). The N-channel MOSFET offers a maximum on-resistance (Rds On) of 170mOhm at 2.4A and 10V gate-source voltage (Vgs). Key parameters include a maximum gate charge (Qg) of 8.2 nC at 10V Vgs and a threshold voltage (Vgs(th)) of 4.2V at 250µA. With a maximum power dissipation of 1.14W (Ta), this component is suitable for operation across a temperature range of -55°C to 150°C (TJ). The SI3430DV-T1-BE3 is commonly utilized in power management and switching applications within the industrial and consumer electronics sectors. It is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 11 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1.8A (Ta) |
| Rds On (Max) @ Id, Vgs | 170mOhm @ 2.4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.14W (Ta) |
| Vgs(th) (Max) @ Id | 4.2V @ 250µA |
| Supplier Device Package | 6-TSOP |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 8.2 nC @ 10 V |
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