SI3424DV-T1-GE3
MOSFET N-CH 30V 5A 6TSOPManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SI3424DV-T1-GE3 is a TrenchFET® N-Channel power MOSFET designed for high-efficiency switching applications. This component features a 30 V drain-source voltage (Vdss) and a continuous drain current (Id) of 5 A at 25°C, with a maximum power dissipation of 1.14 W. The device exhibits a low on-resistance (Rds On) of 28 mOhm at 6.7 A and 10 V Vgs. It is packaged in a 6-TSOP (SOT-23-6 Thin) and suitable for surface mounting. The operating temperature range is -55°C to 150°C. Key drive voltage specifications include a maximum Rds On at 4.5 V and 10 V. The gate charge (Qg) is a maximum of 18 nC at 10 V. This Vishay Siliconix MOSFET is utilized in consumer electronics and industrial power management systems.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5A (Ta) |
| Rds On (Max) @ Id, Vgs | 28mOhm @ 6.7A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.14W (Ta) |
| Vgs(th) (Max) @ Id | 800mV @ 250µA (Min) |
| Supplier Device Package | 6-TSOP |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 18 nC @ 10 V |
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